Dislocation engineering using a scanned laser

摘要

A method for manipulating dislocations from a semiconductor device includes directing a light-emitting beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam. Manipulating the plurality of dislocations includes directly scanning the plurality of dislocations with the light-emitting beam to manipulate a location of each of the plurality of dislocations on the surface portion of the semiconductor body by adjusting a temperature of the surface portion of the semiconductor body corresponding to the plurality of dislocations and adjusting a scan speed of the a light-emitting beam.

主权项

1. A method for manipulating dislocations from a semiconductor device, comprising:
directing a light-emitting beam locally onto a surface portion of a semiconductor body of the semiconductor device that includes active regions having a plurality of dislocations, wherein the surface portion of the semiconductor body is disposed above a buried oxide layer; and manipulating the plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, wherein manipulating the plurality of dislocations comprises directly scanning the plurality of dislocations with the light-emitting beam to manipulate a vertical location relative to a surface of the semiconductor body of each of the plurality of dislocations by adjusting a temperature of the surface portion of the semiconductor body corresponding to the plurality of dislocations and adjusting a scan speed of the a light-emitting beam.