GAP FILL SELF PLANARIZATION ON POST EPI

摘要

The present disclosure relates to an IC which includes transistors having structures separated by a fluid dielectric material, and a related formation method. In some embodiments, an IC has semiconductor substrate and an embedded silicon gate (SeGe) region which extends from a position in the semiconductor substrate to a positon on the semiconductor substrate. A first gate structure is located in a position separated by a first gap from the embedded SiGe region. The fluid dielectric material is located between a gate structure material and a free metal dielectric material (PMD) arranged on the fluid dielectric material. The fluid dielectric material provides good gap filling capacities which reduce void formation while a gap filling process is performed between the gate structures adjacent to the fluid dielectric material.