Patterned line end space

摘要

One or more techniques or systems for forming a line end space structure are provided herein. In some embodiments, a first patterned second hard mask (HM) region is formed above a first HM region. In some embodiments, a first sacrificial HM region and a second sacrificial HM region are formed above at least one of the first patterned second HM region or the first HM region. Photo resist (PR) is patterned above the second sacrificial HM region, and a spacer region is deposited above the PR and second sacrificial HM region. In some embodiments, at least some of at least one of the spacer region, the PR, or the respective sacrificial HMs is removed. Accordingly, first patterned second hard mask (HM) region is patterned, thus forming the line end space structure associated with an end-to-end space.

主权项

1. A method for forming a line end space structure, comprising:
forming a first patterned second hard mask (HM) region associated with a first pattern location based on a first patterned first photo resist (PR) region; forming a first sacrificial HM region above at least some of the first patterned second HM region; forming a second sacrificial HM region above at least some of the first sacrificial HM region; forming at least one of a first patterned second PR region or a second patterned second PR region above at least some of the second sacrificial HM region, the first patterned second PR region associated with a first line location, the second patterned second PR region associated with a second line location; forming a spacer region above at least some of at least one of the first patterned second PR region, the second patterned second PR region, or the second sacrificial HM region; and removing at least some of the first patterned second HM region after the forming a spacer region.