Method for making epitaxial structure

摘要

A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, growing a buffer layer on the epitaxial growth surface; placing a graphene layer on the buffer layer; epitaxially growing an epitaxial layer on the buffer layer; and removing the substrate. The graphene layer includes a number of apertures to expose a part of the buffer layer. The epitaxial layer is grown from the exposed part of the buffer layer and through the apertures.

主权项

1. A method for making an epitaxial structure, the method comprising:
growing a buffer layer on an epitaxial growth surface of a substrate; fabricating a continuous graphene layer on the buffer layer; obtaining a patterned graphene layer by patterning the continuous graphene layer, wherein the patterning the continuous graphene layer comprises:
making a patterned metal titanium layer by depositing metal titanium on a patterned carbon nanotube structure;forming a patterned titanium dioxide layer by oxidizing the patterned metal titanium layer;contacting the patterned titanium dioxide layer with the continuous graphene layer;irradiating the patterned titanium dioxide layer with ultraviolet light; andremoving the patterned titanium dioxide layer; epitaxially growing an epitaxial layer on the buffer layer to obtain an epitaxial structure preform; and removing the substrate.