发明名称 | Method for fabricating nonvolatile memory device | ||
摘要 | A method for fabricating a nonvolatile memory device includes forming a structure having a plurality of first interlayer insulating layers and a plurality of sacrificial layers alternately stacked over a substrate, forming main channel holes configured to penetrate the structure, sequentially forming a preliminary charge trap layer, a tunnel insulating layer, and a channel layer on the inner walls of the main channel holes, forming a trench configured to penetrate the plurality of sacrificial layers on both sides of each of the main channel holes, and forming insulating oxide layers by oxidizing the preliminary charge trap layer on inner sides of the first interlayer insulating layers. In accordance with this technology, since the charge trap layer is separated for each memory cell, the spread of charges may be prevented and the reliability of a nonvolatile memory device may be improved. | ||
申请公布号 | US8865554(B2) | 申请公布日期 | 2014.10.21 |
申请号 | US201213717383 | 申请日期 | 2012.12.17 |
申请人 | SK Hynix Inc. | 发明人 | Doo Hyun-Sik |
分类号 | H01L21/336;H01L27/115;H01L29/66 | 主分类号 | H01L21/336 |
代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
主权项 | 1. A method for fabricating a nonvolatile memory device, comprising: forming a structure having a plurality of first interlayer insulating layers and a plurality of sacrificial layers alternately stacked over a substrate; forming main channel holes configured to penetrate the structure; sequentially forming a preliminary charge trap layer, a tunnel insulating layer, and a channel layer on inner walls of the main channel holes; forming a trench configured to penetrate the plurality of sacrificial layers on both sides of each of the main channel holes; and forming insulating oxide layers by oxidizing the preliminary charge trap layer on inner sides of the first interlayer insulating layers. | ||
地址 | Gyeonggi-do KR |