Method of manufacturing silicon carbide structure

摘要

A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 μm from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives.

主权项

1. A method of manufacturing a silicon carbide structure, comprising:
forming a silicon carbide layer on a base plate by chemical vapor deposition; removing the base plate and leaving a silicon carbide structure; heat-treating the silicon carbide structure and decreasing electrical conductivity of the silicon carbide structure; and removing a thickness of at least 200 μm from an upper surface and from a lower surface of the silicon carbide structure.