发明名称 Error correction in a stacked memory
摘要 Electronic apparatus, systems, and methods to construct and operate the electronic apparatus and/or systems include a stack of memory dies with user data and/or first level error correction data stored in a stripe across the memory dies. One such stack can include a second level error correction vault, such as a parity vault, to store parity data corresponding to the user data and/or first level error correction data. Additional apparatus, systems, and methods are disclosed.
申请公布号 US8869005(B2) 申请公布日期 2014.10.21
申请号 US201213692812 申请日期 2012.12.03
申请人 Micron Technology, Inc. 发明人 Jeddeloh Joe M.
分类号 G11C29/00;H03M13/03;G06F11/10 主分类号 G11C29/00
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. An apparatus comprising: a stack of memory dies partitioned into a plurality of data vaults, the stack arranged to store user data in a stripe across the data vaults; a vault to operatively store second level error correction data corresponding to the user data; a spare vault that has not been allocated for either the user data or correction data; and a logic die operatively coupled to the stack of memory dies, the logic die structured to control management of allocation of data vaults to the stripe, the logic die configured to control operation of the spare vault available to store user data, first level error correction data, or both user data and first level error correction data upon determining that one of the data vaults has become a faulty data vault.
地址 Boise ID US