Method of operating nonvolatile memory device controlled by controlling coupling resistance value between bit line and page buffer

摘要

A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more.

主权项

1. A method of operating a nonvolatile memory device, the method comprising:
determining whether a most significant bit (MSB) program operation is performed on even memory cells coupled to even bit lines of a selected page; setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the MSB program operation for the even memory cells is performed; performing an MSB program operation on odd memory cells coupled to the odd bit lines; and performing an MSB verification operation for verifying whether threshold voltages of the odd memory cells on which the MSB program operation is performed are a first target voltage or more by coupling the odd bit line to the page buffer to the set-coupling resistance value.