SRAM read-write memory cell having ten transistors

摘要

A device and a method for controlling an SRAM-type device, including: a bistable circuit and two switching circuits respectively connecting two access terminals of the bistable circuit to two complementary bit lines in a first direction, each switching circuit including a first switch and a second switch in series between one of the bit lines and one of the access terminals, the control terminal of the second switch being connected to a word control line in the first direction; and a third switch between the midpoint of the series connection and a terminal of application of a reference potential, a control terminal of the third switch being connected to the other one of the access terminals.

主权项

1. An SRAM-type device, comprising:
a bistable circuit; and two switching circuits respectively connecting two access terminals of the bistable circuit to two complementary bit lines in a first direction, each switching circuit comprising: a first switch and a second switch in series between one of the bit lines and one of said access terminals, the control terminal of the second switch being connected to a word control line in the first direction; a third switch between the midpoint of said series connection and a terminal of application of a reference potential, a control terminal of the third switch being connected to the other one of said access terminals.