Semiconductor device

摘要

A semiconductor device (npn bipolar transistor) includes an n-type collector layer, a base layer constituted by a p+ diffusion layer, a SiGe layer and a p-type silicon film, an n-type emitter layer and a charge transport prevention film formed between the n-type collector layer and the n-type emitter layer and having an effect as a potential barrier with respect to either electrons or holes.

主权项

1. A semiconductor device comprising:
a collector layer having a first conductive type; a base layer having a second conductive type; a emitter layer having said first conductive type; and a charge transport prevention portion formed at least one of on a boundary between said collector layer and said base layer, in said base layer, on a boundary between said base layer and said emitter layer and in said emitter layer, having an effect as a potential barrier with respect to holes, and electrons move over the potential barrier of the charge transport prevention portion, wherein the charge transport prevention portion has an energy band in which a barrier height with respect to electrons is substantially zero to facilitate diffusion transport of electrons from said emitter layer to said base layer and a barrier height with respect to holes is larger than an energy of the holes to facilitate a barrier to hole transport from said base layer to said emitter layer.