发明名称 |
Apparatus and method for processing substrate |
摘要 |
There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface. |
申请公布号 |
US8864936(B2) |
申请公布日期 |
2014.10.21 |
申请号 |
US200812810915 |
申请日期 |
2008.12.10 |
申请人 |
Charm Engineering Co., Ltd. |
发明人 |
Han Young Ki;Seo Young Soo |
分类号 |
C23F1/00;H01L21/306;C23C16/00;H01J37/20;H01J37/32 |
主分类号 |
C23F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus for processing a substrate, comprising:
a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface, wherein the support unit comprises an arm portion configured to expand and contract in the chamber; and a support portion bent inwardly at an end of the arm portion to support an edge region of the substrate on a top surface thereof, wherein the support portion is configured to be in a floating state spaced apart from the stage not to electrically interfere with other components, and wherein a bent portion of the support portion is inclined. |
地址 |
KR |