Semiconductor device and manufacturing method of the same

摘要

A semiconductor device implemented with structures to suppress leakage current generation during operation and a method of making the same is provided. The semiconductor device includes a semiconductor substrate of first conductivity type, a second insulation film, which has at least one aperture between first and second apertures, formed on top of a first insulation film. The semiconductor device layer structure accommodates tensile stress differences between device layers to suppress lattice dislocation defects during device manufacturing and thus improves device reliability and performance.

主权项

1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed on a first face of the semiconductor substrate, the second conductivity type being of an opposite conductivity of the first conductivity type; a second semiconductor layer of the first conductivity type formed in the first semiconductor layer; a first insulation film formed over the first and second semiconductor layers on the first face of the semiconductor substrate, first insulation film having a first aperture forming an opening to the first semiconductor layer and a second aperture forming an opening to the second semiconductor layer; a second insulation film formed over the first insulation film, the second insulation film having at least one third aperture located between the first aperture and the second aperture; a first main electrode formed on a second face of the semiconductor substrate opposite to the first face; a second main electrode formed in the first aperture; and a third main electrode formed in the second aperture and the at least one third aperture.