| 发明名称 | Non-volatile memory device | ||
| 摘要 | A non-volatile memory device includes a plurality of memory blocks, first block switches configured to correspond to the respective odd-numbered memory blocks of the plurality of memory blocks and couple the word lines of the odd-numbered memory blocks and first local lines, second block switches configured to correspond to the respective even-numbered memory blocks of the plurality of memory blocks and couple the word lines of the even-numbered memory blocks and second local lines, a local line switch unit configured to selectively couple the first local lines or the second local lines and global word lines, and a high voltage generator configured to supply operating voltages to the global word lines. | ||
| 申请公布号 | US8867299(B2) | 申请公布日期 | 2014.10.21 |
| 申请号 | US201213488207 | 申请日期 | 2012.06.04 |
| 申请人 | SK Hynix Inc. | 发明人 | Ryu Je Il;Kim Duck Ju |
| 分类号 | G11C11/00;G11C8/14 | 主分类号 | G11C11/00 |
| 代理机构 | William Park & Associates Patent Ltd. | 代理人 | William Park & Associates Patent Ltd. |
| 主权项 | 1. A non-volatile memory device, comprising: a plurality of memory blocks; first block switches configured to correspond to respective odd-numbered memory blocks of the plurality of memory blocks and couple word lines of the odd-numbered memory blocks and first local lines; second block switches configured to correspond to respective even-numbered memory blocks of the plurality of memory blocks and couple word lines of the even-numbered memory blocks and second local lines; a local line switch unit configured to selectively couple the first local lines or the second local lines and global word lines; and a high voltage generator configured to supply operating voltages to the global word lines. | ||
| 地址 | Gyeonggi-do KR | ||