Systems and methods for a thin film capacitor having a composite high-K thin film stack

摘要

Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

主权项

1. A thin film capacitor prepared by a process comprising:
depositing an electrode layer of conductive material on a substrate material; depositing a seed layer of ferroelectric material on the electrode layer utilizing a deposition process that forms a randomly-oriented grain structure; depositing a second layer of ferroelectric material on the seed layer using a high temperature sputter process in a manner that forms a columnar-oriented grain structure; and depositing a metal interconnect layer to provide electric connections for the capacitor.