发明名称 |
Imprinting of partial fields at the edge of the wafer |
摘要 |
Edge field patterning of a substrate having full fields and partial fields may include patterning using a template having multiple mesas with each mesa corresponding to a field on the substrate. Polymerizable material may be deposited solely between the template and the full fields of the substrate. A non-reactive material may be deposited between the template and partial fields of the substrate. |
申请公布号 |
US8865046(B2) |
申请公布日期 |
2014.10.21 |
申请号 |
US201113098959 |
申请日期 |
2011.05.02 |
申请人 |
Canon Nanotechnologies, Inc. |
发明人 |
Sreenivasan Sidlgata V.;Choi Byung-Jin |
分类号 |
B29C43/58;B29C59/00;B82Y40/00;G03F7/00;B29C43/00;B82Y10/00;B29C43/02 |
主分类号 |
B29C43/58 |
代理机构 |
|
代理人 |
King Cameron A. |
主权项 |
1. A method of edge field patterning on a substrate using an imprint lithography system, comprising:
positioning an imprint lithography template with the substrate such that a portion of the imprint lithography template is in superimposition with the substrate, the imprint lithography template having at least one mesa corresponding to a partial field on the substrate; depositing polymerizable material in a layer having uniform thickness on the partial field in superimposition with the imprint lithography template; positioning the imprint lithography template toward the substrate; contacting the imprint lithography template with the polymerizable material; applying an asymmetrical force to the template such that the center of pressure on the template is offset from the center of the template, wherein the center of pressure on the template is offset to the center of pressure of the deposited polymerizable material on the partial field; and solidifying the polymerizable material to provide an edge field pattern on the substrate. |
地址 |
Austin TX US |