发明名称 Chip package structure
摘要 A first back surface of a first chip faces toward a carrier. A first active surface of the first chip has first pads and a first insulting layer thereon. A second chip is disposed on the first chip and electrically connected to the carrier. A second active surface of the second chip faces toward the first active surface. The second active surface has second pads and a second insulting layer thereon. Bumps connect the first and second pads. First and second daisy chain circuits are respectively disposed on the first and second insulting layers. Hetero thermoelectric device pairs are disposed between the first and second chips and connected in series by the first and second daisy chain circuits, and constitute a circuit with an external device. First and second heat sinks are respectively disposed on a second surface of the carrier and a second back surface of the second chip.
申请公布号 US8866309(B2) 申请公布日期 2014.10.21
申请号 US201213727599 申请日期 2012.12.27
申请人 Industrial Technology Research Institute 发明人 Chang Jing-Yao;Chang Tao-Chih;Huang Yu-Wei;Lin Yu-Min;Huang Shin-Yi
分类号 H01L23/48;H01L29/40 主分类号 H01L23/48
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A chip package structure, comprising: a carrier having a first surface and a second surface opposite to each other; a first chip disposed on the carrier, the first chip having a first active surface and a first back surface, the first back surface facing toward the first surface, and the first active surface having a plurality of first pads and a first insulting layer thereon; a second chip disposed on the first chip and electrically connected to the carrier, the second chip having a second active surface and a second back surface, the second active surface facing toward the first active surface, and the second active surface having a plurality of second pads and a second insulting layer thereon; a plurality of bumps connecting the first pads and the second pads as an electrical conduction of the first chip and the second chip; a first daisy chain circuit disposed on the first insulting layer of the first active surface; a second daisy chain circuit disposed on the second insulting layer of the second active surface; a plurality of hetero thermoelectric device pairs disposed between the first chip and the second chip, and connected in series by the first daisy chain circuit and the second daisy chain circuit, and the hetero thermoelectric device pairs constituted a circuit with an external device; a first heat sink disposed on the second surface of the carrier; a second heat sink disposed on the second back surface of the second chip, wherein the first heat sink and the second heat sink have different heat dissipation efficiencies; and an encapsulant covering the carrier, the first chip and the second chip.
地址 Hsinchu TW
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