Charge trapping dielectric structures

摘要

A dielectric structure may be arranged having a thin nitrided surface of an insulator with a charge blocking insulator over the nitrided surface. The insulator may be formed of a number of different insulating materials such as a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. In an embodiment, the dielectric structure may be formed by nitridation of a surface of an insulator using ammonia and deposition of a blocking insulator having a larger band gap than the insulator. The dielectric structure may form part of a memory device, as well as other devices and systems.

主权项

1. An electronic apparatus comprising:
a semiconductive substrate; a first insulator material disposed on and contacting a portion of the semiconductive substrate the first insulator material consisting of MXCYOZ wherein MX is a metal; a second insulator material disposed on and contacting the first insulator material, the second insulator material being a charge trapping region having a composition to trap charge carriers, wherein the second insulator material is a dielectric nitride that is a nitrided portion of the first insulator material; a third insulator material disposed on and contacting the second insulator material, wherein an equivalent oxide thickness of the third insulator material determines an overall threshold voltage of the electronic apparatus; and a conductive material disposed on the third insulator material.