发明名称 Light emitting diode component
摘要 A light-emitting diode component includes a primary source, a conversion layer forming a secondary source configured for absorbing the primary radiation at least in part and emitting a secondary radiation, an encapsulation layer, situated between the primary and secondary sources. The light-emitting diode component also includes a reflection layer (i) situated between the encapsulation layer and the conversion layer and having a face in contact with the encapsulation layer so as to form an interface with the encapsulation layer, the reflection layer (i) and the encapsulation layer being configured so that the interface allows the primary radiation originating from the primary source to pass and reflects the secondary radiation toward the outside of the light emitting diode.
申请公布号 US8866375(B2) 申请公布日期 2014.10.21
申请号 US201213654838 申请日期 2012.10.18
申请人 Commissariat a l' Energie Atomique et aux Energies Alternatives 发明人 Gasse Adrien;Desieres Yohan;Levy Francois
分类号 H01J1/62;H01J63/04;H01L33/46;H01L33/50;H05B33/10;H05B33/12;H01L33/52 主分类号 H01J1/62
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A light-emitting diode component comprising: at least one primary source configured to emit a primary radiation when said primary source is electrically activated; at least one conversion layer forming a secondary source configured to absorb, at least in part, the primary radiation and to emit a secondary radiation; at least one encapsulation layer contacting the primary source and configured to allow the primary radiation emitted by the primary source toward the secondary source to pass; and an optically homogeneous reflection layer, disposed between the encapsulation layer and the conversion layer, having a first face in contact with the conversion layer and a second face in contact with the encapsulation layer, the second face of the optically homogeneous reflection layer forming an interface with the encapsulation layer, wherein the optically homogeneous reflection layer and the encapsulation layer are configured so that said interface allows the primary radiation originating from the primary source to pass and so that rays of the secondary radiation emitted toward said interface and arriving on said interface with an angle greater than Arcsin(n2/ni) in relation to a perpendicular line to said interface are reflected by total reflection, and wherein n2 and ni are respective indexes of refraction of the encapsulation layer and the optically homogeneous reflection layer.
地址 Paris FR