发明名称 IC manufacturing method, IC and apparatus
摘要 A method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over the components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element.
申请公布号 US8866239(B2) 申请公布日期 2014.10.21
申请号 US201113289063 申请日期 2011.11.04
申请人 NXP B.V. 发明人 Van Dal Marcus;Humbert Aurelie;Merz Matthias;Ponomarev Youri Victorovitch
分类号 H01L27/14;H01L29/66;H01L23/34 主分类号 H01L27/14
代理机构 代理人
主权项 1. An integrated circuit comprising a substrate carrying a plurality of components and a metallization stack over said plurality of components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element, the integrated circuit further comprising a patterned moisture-impenetrable layer over the metallization stack and a patterned passivation layer over the moisture-impenetrable layer, said patterned passivation layer comprising: a void exposing the first sensing element; and a trench filled with a further moisture-impenetrable material to define a guard ring delimiting a region over the first or second sensing element, said guard ring extending through the passivation layer and the underlying moisture-impenetrable layer to a portion of the metallization stack.
地址 Eindhoven NL