发明名称 |
IC manufacturing method, IC and apparatus |
摘要 |
A method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over the components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element. |
申请公布号 |
US8866239(B2) |
申请公布日期 |
2014.10.21 |
申请号 |
US201113289063 |
申请日期 |
2011.11.04 |
申请人 |
NXP B.V. |
发明人 |
Van Dal Marcus;Humbert Aurelie;Merz Matthias;Ponomarev Youri Victorovitch |
分类号 |
H01L27/14;H01L29/66;H01L23/34 |
主分类号 |
H01L27/14 |
代理机构 |
|
代理人 |
|
主权项 |
1. An integrated circuit comprising a substrate carrying a plurality of components and a metallization stack over said plurality of components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element, the integrated circuit further comprising a patterned moisture-impenetrable layer over the metallization stack and a patterned passivation layer over the moisture-impenetrable layer, said patterned passivation layer comprising:
a void exposing the first sensing element; and a trench filled with a further moisture-impenetrable material to define a guard ring delimiting a region over the first or second sensing element, said guard ring extending through the passivation layer and the underlying moisture-impenetrable layer to a portion of the metallization stack. |
地址 |
Eindhoven NL |