| 摘要 |
<p>A light emitting device according to an embodiment of the present invention comprises: a first light emitting structure including a first semiconductor layer of a first conductive type, a first active layer beneath the first semiconductor layer, and a second semiconductor layer of a second conductive type beneath the first active layer; a second light emitting structure including a third semiconductor layer of the first conductive type, a second active layer beneath the third semiconductor layer, and a fourth semiconductor layer of the second conductive type beneath the second active layer; a first electrode disposed under the first light emitting structure and electrically connected to the second semiconductor layer; a second electrode disposed under the second light emitting structure and electrically connected to the fourth semiconductor layer; a third electrode disposed beneath the first light emitting structure and electrically connected to the first semiconductor layer and the third semiconductor layer; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.</p> |
