| 发明名称 | Semiconductor apparatus, method for manufacturing the same and electric device | ||
| 摘要 | A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device. | ||
| 申请公布号 | US8866312(B2) | 申请公布日期 | 2014.10.21 |
| 申请号 | US201213358840 | 申请日期 | 2012.01.26 |
| 申请人 | Fujitsu Limited | 发明人 | Tani Motoaki;Okamoto Keishiro |
| 分类号 | H01L23/48;H01L23/00;H01L23/498;H01L23/66;H01L23/14;H01L23/13;H01L23/373;H01L23/31 | 主分类号 | H01L23/48 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor apparatus comprising: a semiconductor device including a first electrode which is provided on a top surface of the semiconductor device; a substrate including a recess and a second electrode which is provided on a top surface of the substrate facing the same direction of the top surface of the semiconductor device; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode and cause a bottom surface of the semiconductor device to face a bottom surface of the recess, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material is provided between the bottom surface of the semiconductor device and the bottom surface of the recess and between a side surface of the semiconductor device and a side surface of the recess. | ||
| 地址 | Kawasaki JP | ||