| 发明名称 |
Memory cell that includes multiple non-volatile memories |
| 摘要 |
A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device includes a plurality of memory cells. At least one of the memory cells includes a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element. Each of the first non-volatile memory and the second non-volatile memory is accessible via multiple ports. |
| 申请公布号 |
US8867258(B2) |
申请公布日期 |
2014.10.21 |
| 申请号 |
US201213653079 |
申请日期 |
2012.10.16 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Rao Hari M.;Kim Jung Pill;Haghighi Siamack |
| 分类号 |
G11C11/00;G11C13/00;G11C8/08;G11C11/16;G11C8/16 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
Talpalatsky Sam;Pauley Nicholas J.;Agusta Joseph |
| 主权项 |
1. A memory device comprising:
a plurality of memory cells, wherein at least one of the memory cells comprises:
a first non-volatile memory including a first resistive memory element; anda second non-volatile memory including a second resistive memory element, wherein each of the first non-volatile memory and the second non-volatile memory is accessible via multiple ports. |
| 地址 |
San Diego CA US |
