Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance

摘要

The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer.

主权项

1. A method of forming a film stack on a substrate, comprising:
performing a silicon containing gas soak process to form a silicon containing layer over the substrate; depositing a tungsten nitride layer on the silicon containing layer; reacting the silicon containing layer with the tungsten nitride layer to form a tungsten silicide layer at an interface between the tungsten nitride layer and the silicon containing layer; subjecting the tungsten nitride layer to a nitridation treatment using active nitrogen species from a remote plasma; and depositing a conductive bulk layer directly on the tungsten nitride layer.