Method of manufacturing semiconductor device

摘要

Ineffective chips are formed in the circumference of a semiconductor wafer and effective chips are formed in a region surrounded by the ineffective chips. Dicing lines partition the effective chips and the ineffective chips. Polyimide is formed on an outer circumferential portion of the semiconductor wafer with a predetermined width from an outer circumferential end of the semiconductor wafer such that the polyimide continuously covers the ineffective chips from the outer circumferential end of the semiconductor wafer to the inside and continuously covers a portion which is a predetermined distance away from the outer circumferential end of the semiconductor wafer to the effective chip in the dicing line interposed between the ineffective chips. A metal film is formed on the front electrode formed on the effective chips by plating. The semiconductor wafer is cut into semiconductor chips along the dicing lines by a blade.

主权项

1. A method of manufacturing a semiconductor device comprising:
forming ineffective chips in a circumference of a first main surface of a semiconductor wafer; forming effective chips in a region surrounded by the ineffective chips; forming a front electrode on the effective chips and the ineffective chips; providing an insulating film on dicing lines which partition the effective chips and the ineffective chips; forming a rear electrode on a second main surface of the semiconductor wafer; forming polyimide on an outer circumferential portion of the first main surface of the semiconductor wafer with a predetermined width from an outer circumferential end of the semiconductor wafer such that the polyimide continuously covers the ineffective chips from the outer circumferential end of the semiconductor wafer to the inside and continuously covers a portion which is a predetermined distance away from the outer circumferential end of the semiconductor wafer to the effective chip in the dicing line interposed between the ineffective chips; forming a metal film on the front electrode formed on the effective chips using plating; and cutting the semiconductor wafer into semiconductor chips along the dicing lines using a blade.