Semiconductor device and method for manufacturing same

摘要

A semiconductor device having a high withstand voltage in which a stable withstand voltage can be obtained and a method for manufacturing the same. A JTE region having a second conductivity type is formed in a port ion on an outer peripheral end side of an SiC substrate from a second conductivity type SiC region in a vicinal portion of a surface on one of sides in a thickness direction of a first conductivity type SiC epitaxial layer. A first conductivity type SiC region having a higher concentration of an impurity having the first conductivity type than that of the SiC epitaxial layer is formed in at least a vicinal portion of a surface on one of sides in a thickness direction of a portion in which the JTE regions are bonded to each other.

主权项

1. A semiconductor device comprising:
a silicon carbide substrate having a first conductivity type; a silicon carbide layer provided on a surface at one of sides in a thickness direction of said silicon carbide substrate and having the first conductivity type; a second conductivity type region formed in a part of a vicinal portion of a surface on one of sides in a thickness direction of said silicon carbide layer and having a second conductivity type; and a plurality of junction termination regions formed in a portion on an outer peripheral end side of said silicon carbide substrate from said second conductivity type region in the vicinal portion of the surface at one of the sides in the thickness direction of said silicon carbide layer and having the second conductivity type, wherein said plurality of junction termination regions are formed adjacently to each other or apart from each other in at least the surface on one of the sides in the thickness direction of said silicon carbide layer, a first conductivity type region having the first conductivity type and a higher concentration of an impurity having the first conductivity type than that of said silicon carbide layer is formed in at least a vicinal portion of a surface on one of sides in a thickness direction of a portion in which said junction termination regions are bonded to each other or a portion provided between said junction termination regions which are disposed apart from each other, and said first conductivity type region is formed across said junction termination regions which are adjacent to each other.