Silicon carbide semiconductor device and method for manufacturing same

摘要

A silicon carbide semiconductor device includes a silicon carbide substrate and a contact electrode. The silicon carbide substrate includes an n type region and a p type region that makes contact with the n type region. The contact electrode makes contact with the n type region and the p type region. The contact electrode contains Ni atoms and Si atoms. The number of the Ni atoms is not less than 87% and not more than 92% of the total number of the Ni atoms and the Si atoms. Accordingly, there can be provided a silicon carbide semiconductor device, which can achieve ohmic contact with an n type impurity region and can achieve a low contact resistance for a p type impurity region, as well as a method for manufacturing such a silicon carbide semiconductor device.

主权项

1. A silicon carbide semiconductor device comprising:
a silicon carbide substrate including an n type region and a p type region that makes contact with said n type region; and a contact electrode that makes contact with said n type region and said p type region, said contact electrode containing Ni atoms and Si atoms, the number of said Ni atoms being not less than 87% and not more than 92% of a total number of said Ni atoms and said Si atoms.