Nonvolatile memory device and method of manufacturing the same

摘要

A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.

主权项

1. A method of manufacturing a nonvolatile memory device comprising:
stacking first and second insulating layers alternately on a semiconductor substrate; penetrating the first and second insulating layers to form a semiconductor pattern connected to the semiconductor substrate; forming a trench which is spaced apart from the semiconductor pattern and penetrates the first and second insulating layers; removing the second insulating layers exposed to the trench to form extension portions exposing portions of sidewall of the semiconductor pattern between vertically adjacent ones of the first insulating layers; forming metal liner patterns conformally covering an inner wall of the extension portions; and forming gate electrodes filling the extension portions in which the metal liner patterns are formed.