Method of cutting semiconductor substrate

摘要

Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

主权项

1. A method of cutting a semiconductor substrate, the method comprising the steps of:
irradiating a semiconductor substrate with laser light having a wavelength that enables the laser light to transmit through a laser incident surface of the semiconductor substrate, thereby forming a modified region only within the semiconductor substrate along each of a plurality of cutting lines arranged in a matrix with respect to at least one of a front and a rear surface of the semiconductor substrate, wherein each modified region is a molten processed region separated from the laser incident surface in a thickness direction of the semiconductor substrate, and each modified region forms a cutting area of the semiconductor substrate to be cut; and expanding a sheet, after the cutting areas of the semiconductor substrate are formed by the irradiation step, by pulling peripheral portions of the sheet outwardly, thereby cutting and separating at least the semiconductor substrate along the cutting lines where the cutting areas have been formed, the sheet being bonded to the semiconductor substrate.