Method for manufacturing thin-film transistor active device and thin-film transistor active device manufactured with same

摘要

The present invention provides a method for manufacturing thin-film transistor active device and a thin-film transistor active device manufactured with the method. The method includes providing a substrate; forming a gate terminal on the substrate through sputtering and masking operations; forming a gate insulation layer on the gate terminal through CVD; forming an oxide semiconductor layer on the gate insulation layer through sputtering and masking operations; forming a first protection layer on the oxide semiconductor layer through CVD, forming a metal layer on the first protection layer through sputtering, and forming a data line electrode through masking operation; forming a second protection layer on the first protection layer and the data line electrode through CVD and forming first, second, and third bridging holes through masking operation; forming a transparent conductive layer on the second protection layer through sputtering and patternizing the transparent conductive layer through masking operation.

主权项

1. A method for manufacturing a thin-film transistor active device, comprising the following steps:
(1) providing a substrate; (2) forming a gate terminal on the substrate through sputtering and masking operations; (3) forming a gate insulation layer on the gate terminal through chemical vapor deposition; (4) forming an oxide semiconductor layer on the gate insulation layer through sputtering and masking operations; (5) forming a first protection layer on the oxide semiconductor layer through chemical vapor deposition, forming a metal layer on the first protection layer through a sputtering operation, and forming a data line electrode through a masking operation; (6) forming a second protection layer on the first protection layer and the data line electrode through chemical vapor deposition and forming first, second, and third bridging holes through a masking operation, the first bridging hole being located on the data line electrode, the second and third bridging holes being located on two ends of the oxide semiconductor layer; and (7) forming a transparent conductive layer on the second protection layer through sputtering and patternizing the transparent conductive layer through a masking operation, the transparent conductive layer having a portion electrically connecting the data line electrode and the oxide semiconductor layer via the first and second bridging holes and another portion electrically connecting the oxide semiconductor layer via the third bridging hole to form a pixel electrode, thereby forming a thin-film transistor active device.