发明名称 |
Halftone phase shift blank photomasks and halftone phase shift photomasks |
摘要 |
Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein. |
申请公布号 |
US8865375(B2) |
申请公布日期 |
2014.10.21 |
申请号 |
US201213706978 |
申请日期 |
2012.12.06 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Jang Il-Yong;Kim Hoon;Lee Hye-Kyoung;Woo Sang-Gyun;Nam Dong-Seok |
分类号 |
G03F1/26;G03F1/32 |
主分类号 |
G03F1/26 |
代理机构 |
Myers Bigel Sibley & Sajovec, P.A. |
代理人 |
Myers Bigel Sibley & Sajovec, P.A. |
主权项 |
1. A halftone phase shift photomask, comprising:
a substrate configured to transmit light, the substrate having a pattern area disposed at a center of the substrate and a blind area at a periphery of the substrate; a shift pattern on the substrate, the shift pattern including a first shift pattern on the blind area and a second shift pattern on the pattern area the first shift pattern thicker than the second area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light, wherein the second shift pattern comprises a main portion and a sub-resolution assist feature (SRAF) portion, the SRAF portion being smaller than the main portion. |
地址 |
KR |