发明名称 Halftone phase shift blank photomasks and halftone phase shift photomasks
摘要 Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.
申请公布号 US8865375(B2) 申请公布日期 2014.10.21
申请号 US201213706978 申请日期 2012.12.06
申请人 Samsung Electronics Co., Ltd. 发明人 Jang Il-Yong;Kim Hoon;Lee Hye-Kyoung;Woo Sang-Gyun;Nam Dong-Seok
分类号 G03F1/26;G03F1/32 主分类号 G03F1/26
代理机构 Myers Bigel Sibley & Sajovec, P.A. 代理人 Myers Bigel Sibley & Sajovec, P.A.
主权项 1. A halftone phase shift photomask, comprising: a substrate configured to transmit light, the substrate having a pattern area disposed at a center of the substrate and a blind area at a periphery of the substrate; a shift pattern on the substrate, the shift pattern including a first shift pattern on the blind area and a second shift pattern on the pattern area the first shift pattern thicker than the second area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light, wherein the second shift pattern comprises a main portion and a sub-resolution assist feature (SRAF) portion, the SRAF portion being smaller than the main portion.
地址 KR