| 主权项 |
1. An MTJ element comprising:
a fixed magnetic layer positioned over a substrate; a free magnetic layer positioned over said substrate; and a tunnel barrier layer placed between said fixed and free magnetic layers and comprising an insulative layer, wherein one of said fixed and free magnetic layers is positioned over said tunnel barrier layer, wherein said one of said fixed and free magnetic layers includes:
a first ferromagnetic layer formed on said tunnel barrier layer;a first non-magnetic layer formed on said first ferromagnetic layer; anda second ferromagnetic layer formed on said first non-magnetic layer,wherein a top surface of said first ferromagnetic layer is in contact with said first non-magnetic layer, andwherein said first ferromagnetic layer includes a first orientation control buffer consisting of material selected from a group consisting of tantalum (Ta), ruthenium (Ru), niobium (Nb), vanadium (V), osmium (Os), rhodium (Rh), iridium (Ir), titanium (Ti), zirconium (Zr), hafnium (Hf), copper (Cu), chromium (Cr), molybdenum (Mo), tungsten (W), aluminum (Al), magnesium (Mg), silicon (Si), yttrium (Y), cerium (Ce), palladium (Pd), rhenium (Re), and alloys thereof, wherein said first ferromagnetic layer further includes: a first ferromagnetic film; and a second ferromagnetic film positioned over said first ferromagnetic film, and wherein said first orientation control buffer is placed between said first and second ferromagnetic films and designed to provide ferromagnetic coupling between said first and second ferromagnetic films, and wherein the closest-packed face of said second ferromagnetic film is configured with a higher orientation perpendicular to the film plane compared to said first ferromagnetic film. |
