| 摘要 |
<p>The present technique relates to a method for fabricating a semiconductor device. A method for fabricating a semiconductor device according to the present technique include a step of forming first lines which have a hydrophobic surface and is extended in a direction between insulating layers having a hydrophilic surface; a step of exposing the first lines by forming particles having a hydrophilic surface in the upper part of the insulating layer by a self-alignment method; a step of forming variable resistance elements in the upper part of the exposed first lines; and a step of removing the particles. According to the present technique, a micro pattern can be formed without a lithography and an etching process, thereby simplifying the process of manufacturing a semiconductor device, saving manufacturing costs, and basically preventing etching damage.</p> |
