发明名称 APPARATUS AND METHOD FOR EXTRACTING DEPTH INFORMATION OF DEFECT, AND METHOD FOR IMPROVING SEMICONDUCTOR PROCESS USING THE DEPTH INFORMATION OF DEFECT
摘要 <p>A technological concept of the present invention provides a defect depth information extracting device, a method thereof, and a semiconductor process improving method using the defect depth information, capable of extracting not only horizontal information of a defect but also depth information in regard to a defect test of a semiconductor device. The defect depth information extracting device includes: an optical microscope including a focus adjusting part changing a focus position and obtaining multiple images while changing the focus position in a depth direction (z-axis direction) toward a subject through the focus adjusting part; an image processing device generating an optical intensity image according to the focus position by integrating the images and extracting the defect depth information by comparing the optical intensity image with the images to be compared; and a library storing optical intensity images obtained through a simulation or a test as the images to be compared and providing the images to be compared to the image processing device to extract the defect depth information.</p>
申请公布号 KR20140122608(A) 申请公布日期 2014.10.20
申请号 KR20130039512 申请日期 2013.04.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN, JEONG HO;SUN, JONG CHEON;LEE, DONG RYUL;LEE, BYOUNG HO;IHM, DONG CHUL;CHIN, SOO BOK
分类号 H01L21/66 主分类号 H01L21/66
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