METHODS OF FORMING A FIELD EFFECT TRANSISTOR, INCLUDING FORMING A REGION PROVIDING ENHANCED OXIDATION

摘要

Provided is a method to manufacture a semiconductor device capable of improving the performance and reliability of a semiconductor device by forming a region providing enhanced oxidation. The method comprises: implanting ions into a substrate having a fin-type body protruding from the substrate, wherein the fin-type body overlaps a part of the implanted region of the ions; recessing the substrate to remove parts of the implanted region exposed by the fin-type body wherein the fin-type body overlaps a remaining part of the implanted region; forming an isolation layer on the substrate and on the sidewall of the remaining part of the implanted region; and oxidizing the remaining part of the implanted region.