| 摘要 |
<p>An antireflective coating (ARC) formulation for use in photolithography is provided that comprises silicon-rich polysilanesiloxane resins dispersed in a solvent, as well as a substrate having a surface coated with the ARC formulation and a method of applying the ARC formulation to said surface to form an ARC layer. The polysilanesiloxane resins comprise a first component defined by structural units of (R′)2SiO2; a second component defined by structural units of (R″)SiO3 and a third component defined by structural units of (R′″)q+2Si2O4−q. In these polysilanesiloxane resins, the R′, R″, and R′″are independently selected to be hydrocarbon or hydrogen (H) groups; and the subscript q is 1 or 2. Alternatively, the R′, R″, and R′″are independently selected as methyl (Me) or hydrogen (H) groups. Typically, the first component is present in a molar ratio x, the second component is present in molar ratio y, and the third component is present in a molar ratio z, such that (x+y+z)=1, x<y, and x<z. The polysilanesiloxane resin has a silicon content that is greater than or equal to about 42 wt. %.</p> |
