发明名称 PLASMA PROCESSING METHOD AND PROCESSING APPARATUS
摘要 <p>The present invention relates to a plasma processing method and a plasma processing apparatus, capable of performing a desired plasma process by gradually changing the dissociation state of plasma according as plasma processing time elapses. The present invention relates to the plasma processing method using the plasma processing apparatus which includes a plasma processing chamber which processes samples with plasma, a first high frequency power source which supplies first high frequency power for generating the plasma, and a second high frequency power source which supplies second high frequency power to a sample stand which mounts the samples. The dissociation state of the plasma is controlled to the desired dissociation state by modulating the first high frequency power with a first pulse and gradually controlling the duty ratio of the first pulse according as the plasma processing time elapses.</p>
申请公布号 KR20140122157(A) 申请公布日期 2014.10.17
申请号 KR20130093845 申请日期 2013.08.07
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 MUTO SATORU;ONO TETSUO;OHGOSHI YASUO;EITOKU HIROFUMI
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
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