发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can adjust a resistance value.SOLUTION: A semiconductor device manufacturing method comprises: forming a semiconductor layer on a substrate; forming an insulation film on the semiconductor layer; forming a first opening and a second opening in the insulation film; forming a conductive film on the insulation film; etching the conductive film to form wiring which contacts the semiconductor layer via the first opening; and adding a hydrogen or a noble gas to a part of the semiconductor layer exposed in the second opening. Or, the semiconductor device manufacturing method comprises: performing a plasma treatment on the part of the semiconductor layer exposed in the second opening. |
申请公布号 |
JP2014197701(A) |
申请公布日期 |
2014.10.16 |
申请号 |
JP20140124866 |
申请日期 |
2014.06.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
OSHIMA KAZUAKI |
分类号 |
H01L27/04;H01L21/82;H01L21/822 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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