| 摘要 |
A semiconductor device, wherein: a diode-built-in IGBT (16) is composed of IGBT elements (21a) driven by a drive signal input to a gate, and diode elements (22a), both provided on the same semiconductor substrate; a sensing element (18) is provided with a diode sensing element (22b) through which current flows in proportion to the current flowing in the diode elements, and an IGBT sensing element (21b) through which current flows in proportion to the current flowing in the IGBT elements; and a switch element (40) is connected to a first current pathway (51) passing through the diode sensing element, and a second current pathway (52) that differs from the first current pathway. The switch element is turned off when current is not flowing to the diode sensing element, and sets the second current pathway and other current pathways to a nonconductive state; and is turned on when current is flowing to the diode sensing element, sets the second current pathway and other current pathways to a conductive state, and sends current to the second current pathway. |
