| 摘要 |
In this semiconductor device, a p layer that is provided on one surface layer of an n- drift layer is partitioned into a p base region (5) and a floating p region (6) by means of a plurality of trenches (4). On a trench (4) side wall on the p base region (5) side, a first gate electrode (9a) is provided with a first insulating film (8a) therebetween, and on a trench side wall on the floating p region (6) side, a shield electrode (9b) is provided with a second insulating film (8b) therebetween. Between the first gate electrode (9a) conductively connected to a gate runner (13) via a contact plug embedded in a first contact hole (10a), and the shield electrode (9b) conductively connected to an emitter electrode (11) via a contact plug embedded in a second contact hole (10b), an insulating film (20) is provided, said insulating film reaching the bottom surface of the trench (4) from a substrate front surface. Consequently, a manufacturing process can be shortened, and the semiconductor device having a low loss and high reliability can be provided. |
