| 摘要 |
<p>PROBLEM TO BE SOLVED: To produce a metal wiring line that can respond to an increase in size of a substrate.SOLUTION: At least one layer of a conductive film is formed on an insulating surface; a resist pattern is formed on the conductive film; and the conductive film having the resist pattern is etched to form a metal wiring line having a controlled tapered angleαin accordance with a bias power density, an ICP (inductively coupled plasma) power density, temperature of a lower electrode, pressure, a total flow volume of an etching gas, or a proportion of oxygen or chlorine in the etching gas. The metal wiring line thus formed has reduced fluctuations in the width or length and can sufficiently respond to an increase in size of a substrate.</p> |
