发明名称 Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film
摘要 A magnetic thin film deposition having PMA (perpendicular magnetic anisotropy) is a multilayered fabrication of materials having differing crystal symmetries that smoothly transition by use of a seed layer that promotes symmetry matching. An interface between layers in the deposition, such as an interface between a layer of MgO and an Fe-containing ferromagnetic layer, is a source of perpendicular magnetic anisotropy which then propagates throughout the remainder of the deposition by means of the symmetry matching seed layer.
申请公布号 US2014306303(A1) 申请公布日期 2014.10.16
申请号 US201313863545 申请日期 2013.04.16
申请人 Headway Technologies, Inc. 发明人 Moriyama Takahiro;Wang Yu-Jen;Tong Ru-Ying
分类号 H01L43/10;H01L43/12 主分类号 H01L43/10
代理机构 代理人
主权项 1. A method of forming a magnetic thin film structure having PMA (perpendicular magnetic anisotropy), comprising: providing a thin film deposition including an interface between an MgO layer and a ferromagnetic layer formed of or containing Fe, wherein a PMA originates at said interface; forming a multilayered thin film structure over said interface, wherein said multilayered thin film structure includes material layers of different crystal symmetries; forming a transition layer between each layer having a different crystal symmetry; wherein said transition layer promotes a matching between said different crystal symmetries, thereby causing said PMA to be propagated within the entirety of said thin film deposition.
地址 Milpitas CA US