发明名称 |
Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film |
摘要 |
A magnetic thin film deposition having PMA (perpendicular magnetic anisotropy) is a multilayered fabrication of materials having differing crystal symmetries that smoothly transition by use of a seed layer that promotes symmetry matching. An interface between layers in the deposition, such as an interface between a layer of MgO and an Fe-containing ferromagnetic layer, is a source of perpendicular magnetic anisotropy which then propagates throughout the remainder of the deposition by means of the symmetry matching seed layer. |
申请公布号 |
US2014306303(A1) |
申请公布日期 |
2014.10.16 |
申请号 |
US201313863545 |
申请日期 |
2013.04.16 |
申请人 |
Headway Technologies, Inc. |
发明人 |
Moriyama Takahiro;Wang Yu-Jen;Tong Ru-Ying |
分类号 |
H01L43/10;H01L43/12 |
主分类号 |
H01L43/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of forming a magnetic thin film structure having PMA (perpendicular magnetic anisotropy), comprising:
providing a thin film deposition including an interface between an MgO layer and a ferromagnetic layer formed of or containing Fe, wherein a PMA originates at said interface; forming a multilayered thin film structure over said interface, wherein said multilayered thin film structure includes material layers of different crystal symmetries; forming a transition layer between each layer having a different crystal symmetry; wherein said transition layer promotes a matching between said different crystal symmetries, thereby causing said PMA to be propagated within the entirety of said thin film deposition. |
地址 |
Milpitas CA US |