Semiconductor Device with Compensation Regions

摘要

A semiconductor device includes a semiconductor body including an inner region, and an edge region, a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal, and at least one second doped device region of a second doping type complementary to the first doping type in the inner region and coupled to a second terminal. Further, the semiconductor device includes a minority carrier converter structure in the edge region. The minority carrier converter structure includes a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region.

主权项

1. A semiconductor device comprising:
a semiconductor body comprising an inner region and an edge region; a first doped device region of a first doping type in the inner region and the edge region and coupled to a first terminal; at least one second doped device region of a second doping type complementary to the first doping type, in the inner region, and coupled to a second terminal; a minority carrier converter structure in the edge region, the minority carrier converter structure comprising a first trap region of the second doping type adjoining the first doped device region, and a conductor electrically coupling the first trap region to the first doped device region.