PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER

摘要

A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R1 is H or CH3, R2 and R3 are H, F or a monovalent hydrocarbon group, R4 is H or a monovalent hydrocarbon group, R5 and R6 are a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, and k1=0 or 1. A fine hole or trench pattern can be formed therefrom.;

主权项

1. A pattern forming process comprising the steps of applying a resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent, and an optional acid generator onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film in an organic solvent-based developer to form a negative pattern wherein the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved,
said polymer comprising recurring units (a1) of the general formula (1):wherein R1 is hydrogen or methyl, R2 and R3 are each independently hydrogen, fluorine or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 8 carbon atoms, R4 is hydrogen or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 20 carbon atoms in which a constituent —CH2— may be substituted by —O— or —C(═O)—, R5 and R6 are each independently hydrogen or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 8 carbon atoms, R5 and R6 may bond together to form a non-aromatic ring of 3 to 17 carbon atoms with the carbon atom to which they are attached, X1 is a straight, branched or cyclic divalent hydrocarbon group of 1 to 20 carbon atoms in which a constituent —CH2— may be substituted by —O— or —C(═O)—, and k1 is 0 or 1.