METHOD OF FABRICATING HETEROJUNCTION BATTERY

摘要

The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection. Therefore, the step of texturization is removed and the fabrication process simplified. As polycrystal silicon texturization is more challenging, the present invention is of more significance to heterojunction batteries using a polycrystal silicon wafer.

主权项

1. A method of fabricating a heterojunction battery, comprising the steps of:
a) depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer; b) depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; c) depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; d) forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; e) forming a positive electrode on the front of the n-type silicon wafer.