OXIDE SEMICONDUCTOR TARGET, OXIDE SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME, AND THIN FILM TRANSISTOR

摘要

The present invention provides an oxide semiconductor target which comprises a sintered oxide containing zinc, tin and oxygen and also containing aluminum at a content of 0.005 to 0.2 mass% relative to the whole mass of the sintered oxide, wherein the content of silicon relative to the whole mass of the sintered oxide is less than 0.03 mass%.