METHOD OF TESTING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR TESTING SYSTEM

摘要

A method of testing semiconductor devices is provided includes: exposing one end of the device contact on the surface of the semiconductor; using a scanning probe microscopy apparatus to scan a diagnostic area on the semiconductor; applying a direct current bias between the conductive probe and a substrate of the semiconductor; directing a testing radiation at the diagnostic area to increase amount of free carriers in the device contacts and in the semiconductor layer under the device contacts; and detecting the current flowing through the conductive probe and the substrate, wherein a defect current signal is measured when the probe is in contact with a defective device contact and a normal current signal is measured when the probe is in contact with a normal device contact, wherein the testing radiation increases the current measured to increase the difference between the defect signal and the normal signal.

主权项

1. A method of testing semiconductor devices for detecting conductivity of device contacts on a semiconductor layer of a semiconductor, comprising the following steps:
exposing one end of each of the device contacts on the surface of the semiconductor ; using a scanning probe microscopy apparatus, including a cantilever and a conductive probe disposed at the free end of the cantilever, to scan a diagnostic area on the semiconductor; applying a direct current bias between the conductive probe and a substrate of the semiconductor; directing a testing radiation at the diagnostic area to increase amount of free carriers in the device contacts in the diagnostic area and the semiconductor layer under the device contacts; and detecting the current flowing through the conductive probe and the substrate, wherein a defect signal is measured when the conductive probe is in contact with a defective device contact and a normal signal is measured when the conductivity probe is in contact with a normal device contact; wherein the testing radiation increases the current measured to increase the difference between a defect signal and a normal signal.