| 发明名称 |
SELF-ALIGNED STRUCTURE FOR BULK FinFET |
| 摘要 |
A FinFET structure which includes a bulk semiconductor substrate; semiconductor fins extending from the bulk semiconductor substrate, each of the semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and an oxide formed between the bottom portions of the fins. |
| 申请公布号 |
US2014306274(A1) |
申请公布日期 |
2014.10.16 |
| 申请号 |
US201314015967 |
申请日期 |
2013.08.30 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Leobandung Effendi;Yamashita Tenko;Yeh Chun-Chen |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A FinFET structure comprising:
a bulk semiconductor substrate; a plurality of semiconductor fins extending from the bulk semiconductor substrate, each of the plurality of semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and an oxide formed between the bottom portions of the fins. |
| 地址 |
Armonk NY US |
