| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD |
| 摘要 |
Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed. |
| 申请公布号 |
US2014306232(A1) |
申请公布日期 |
2014.10.16 |
| 申请号 |
US201414249108 |
申请日期 |
2014.04.09 |
| 申请人 |
NXP B.V. |
发明人 |
DONKERS Johannes;Broekman Hans;HEIL Stephan;DE KEIJSER Mark;van der Schaar Cecilia |
| 分类号 |
H01L29/205;H01L29/45;H01L29/47 |
主分类号 |
H01L29/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer on the metal. |
| 地址 |
Eindhoven NL |
