DUAL EPITAXIAL INTEGRATION FOR FinFETS

摘要

A dual epitaxial integration process for FinFET devices. First and second pluralities of fins and gates are formed, with some of the fins and gates being for NFETs and some of the fins and gates being for PFETs. A first layer of a hard mask material selected from the group consisting of titanium nitride, tungsten nitride, tantalum nitride, amorphous carbon and titanium carbide is deposited over the NFETs and PFETs. The hard mask material is removed from one of the NFETs and PFETs and a first source and drain material is epitaxially deposited on the fins. A second layer of the hard mask material is deposited over the NFETs and PFETs. The first and second layers of the hard mask material are removed from the other of the NFETs and PFETs and a second source and drain material is deposited on the fins.

主权项

1. A dual epitaxial integration process for FinFET devices comprising:
forming a first plurality of fins on a semiconductor substrate; forming a first plurality of gates with each gate of the first plurality of gates wrapping around at least one of the fins of the first plurality of fins, the first plurality of fins and first plurality of gates being for N-type FinFET devices (NFETs); forming a second plurality of fins on the semiconductor substrate; forming a second plurality of gates with each gate of the second plurality of gates wrapping around at least one of the fins of the second plurality of fins, the second plurality of fins and second plurality of gates being for P-type FinFET devices (PFETs); depositing a first layer of a hard mask material selected from the group consisting of titanium nitride, tungsten nitride, tantalum nitride, amorphous carbon and titanium carbide over the NFETs and PFETs; removing the hard mask material from one of the NFETs and PFETs and avoiding removing the hard mask material from the other of the NFETs and PFETs; epitaxially depositing a first source and drain material on the fins of the one of the NFETs and PFETs; depositing a second layer of the hard mask material over the NFETs and PFETs; removing the first and second layers of the hard mask material from the other of the NFETs and PFETs; epitaxially depositing a second source and drain material on the fins of the other of the NFETs and PFETs; and removing the second layer of the hard mask material from the one of the NFETs and PFETs.