| 发明名称 |
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANCED STABILITY AND METHOD TO FORM SAME |
| 摘要 |
Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer. |
| 申请公布号 |
US2014308760(A1) |
申请公布日期 |
2014.10.16 |
| 申请号 |
US201414313690 |
申请日期 |
2014.06.24 |
| 申请人 |
Doyle Brian S.;Kuo Charles C.;Oguz Kaan;Shah Uday;Karpov Elijah V.;Mojarad Roksana Golizadeh;Doczy Mark L.;Chau Robert S. |
发明人 |
Doyle Brian S.;Kuo Charles C.;Oguz Kaan;Shah Uday;Karpov Elijah V.;Mojarad Roksana Golizadeh;Doczy Mark L.;Chau Robert S. |
| 分类号 |
H01L43/12 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a material layer stack for a magnetic tunneling junction, the method comprising:
forming a free magnetic layer on a dielectric layer; and forming a conductive oxide material layer on the free magnetic layer. |
| 地址 |
Portland OR US |
